#Mitsubishi, #CM150E3U_24H, #IGBT_Module, #IGBT, CM150E3U-24H Insulated Gate Bipolar Transistor 150A I(C) 1200V V(BR)CES N-Channel; CM150E3U-24H
Manufacturer Part Number: CM150E3U-24H
Manufacturer: Mitsubishi ELECTRIC CORP
Package Description: FLANGE MOUNT, R-XUFM-X5
Additional Feature: SUPER FAST RECOVERY
Case Connection: ISOLATED
Collector Current-Max (IC): 150 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X5
Number of Elements: 1
Number of Terminals: 5
Operating Temperature-Max: 150 °C
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 890 W
Subcategory: Insulated Gate BIP Transistors
Terminal Position: UPPER
Insulated Gate Bipolar Transistor 150A I(C) 1200V V(BR)CES N-Channel