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Mitsubishi CM150RL-12NF IGBT Module

#Mitsubishi, #CM150RL_12NF, #IGBT_Module, #IGBT, MITSUBISHI Insulated IGBT Modules High power switching use Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel,

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 30
· Date Code: 2022+
. Available Qty: 358
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CM150RL-12NF Specification

Sell CM150RL-12NF, #Mitsubishi #CM150RL-12NF Stock, MITSUBISHI Insulated IGBT Modules High power switching use Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, 7-elements in a pack, #IGBT_Module, #IGBT, #CM150RL_12NF
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/cm150rl-12nf.html

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic:150A

Collector current Icp:300A

Collector power dissipation Pc:430W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting M5 screw torque 2.5~3.5 N·m

Weight Typical value 350g

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