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Mitsubishi CM150TL-24NF IGBT Module

#Mitsubishi, #CM150TL_24NF, #IGBT_Module, #IGBT, CM150TL-24NF Mitsubishi Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 180
· Date Code: 2024+
. Available Qty: 358
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CM150TL-24NF Specification

Sell CM150TL-24NF, #Mitsubishi #CM150TL-24NF Stock, CM150TL-24NF Mitsubishi Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, #IGBT_Module, #IGBT, #CM150TL_24NF
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Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :150A

Collector current Icp 1ms Tc=25°C :300A

Collector power dissipation Pc:890W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2.5~3.5 N·m

Weight Typical value 750g

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