#MITSUBISHI, #CM150TU_12F, #IGBT_Module, #IGBT, CM150TU-12F Insulated Gate Bipolar Transistor 150A I(C) 600V V(BR)CES N-Channel; CM150TU-12F
Manufacturer Part Number: CM150TU-12F Pbfree Code: No Part Life Cycle Code: Not Recommended Ihs Manufacturer: Mitsubishi ELECTRIC CORP Package Description: FLANGE MOUNT, R-XUFM-X17 Manufacturer: Mitsubishi Electric Risk Rank: 5.16 Case Connection: ISOLATED Collector Current-Max (IC): 150 A Collector-Emitter Voltage-Max: 600 V Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND RTC Gate-Emitter Voltage-Max: 20 V JESD-30 Code: R-XUFM-X17 Number of Elements: 6 Number of Terminals: 17 Operating Temperature-Max: 150 °C Package Body Material: UNSPECIFIED Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Peak Reflow Temperature (Cel): NOT SPECIFIED Polarity/Channel Type: N-CHANNEL Power Dissipation-Max (Abs): 520 W Qualification Status: Not Qualified Subcategory: Insulated Gate BIP Transistors Surface Mount: NO Terminal Form: UNSPECIFIED Terminal Position: UPPER Time Insulated Gate Bipolar Transistor 150A I(C) 600V V(BR)CES N-Channel