#Mitsubishi, #CM150TX_24T, #IGBT_Module, #IGBT, CM150TX-24T High power switching use insulated type 1200V, 150A, 175°C
Collector current IC .......................................... 150A
Collector-emitter voltage VCES ......................... 1200V
Maximum junction temperature Tjmax ..............175°C
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
Collector-Emitter voltage (VCES): 1200V
Gate-Emitter voltage (VGES): ±20V
Collector current (IC): 150A - This is the maximum collector current for continuous DC operation at a temperature of 120°C.
Collector current (ICRM): 300A
Total power dissipation (Ptot): 1150W
Emitter current (IE): 150A
Repetitive Emitter current (IERM): 300A
Isolation voltage (Visol): 2500V - This is the isolation voltage between the device's terminals and the base plate when tested with RMS voltage at a frequency of 60Hz for 1 minute.
Maximum junction temperature (Tjmax): 175°C
Maximum case temperature (TCmax): 125°C
Operating junction temperature (Tjop): -40°C to +150°C
Storage temperature (Tstg): -40°C to +125°C