Mitsubishi CM15TF-12H IGBT Module

Description: Mitsubishi IGBT Modules are de-signed for use in switching applica-tions. Each module consists of sixIGBTs in a three phase bridge con-figuration, with each transistor hav-ing a reverse-connected super-fastrecovery free-wheel diode. All com-ponents and interconnects are iso-lated from the heat sinking base-plate, offering simplified system as-sembly and thermal management.

Features:

.Low Drive PoweruLow VCE(sat)

.Discrete Super-Fast Recovery Free-Wheel Diode

.High Frequency Operation

.Isolated Baseplate for Easy Heat Sinking

Applications:

.AC Motor Control

.Motion/Servo Control

.UPS

.Welding Power Supplies

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM15TF-12H Units

Junction Temperature Tj–40 to +150°C

Storage Temperature Tstg–40 to +125°C

Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts

Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts

Collector Current (TC = 25°C) IC 15 Amperes

Peak Collector Current ICM 30* Amperes

Emitter Current** (TC = 25°C) IE 15 Amperes

Peak Emitter Current** IEM 30* Amperes

Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc 100 Watts

Mounting Torque, M5 Mounting 1.47 ~ 1.96 N · m

Weight 150 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms