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Mitsubishi CM200DX-24S IGBT Module

CM200DX-24S

#Mitsubishi, #CM200DX_24S, #IGBT_Module, #IGBT, CM200DX-24S Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-11

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 80
· Date Code: 2018+
. Available Qty: 1861
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CM200DX-24S Specification

Sell CM200DX-24S, #Mitsubishi #CM200DX-24S Stock, CM200DX-24S Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-11, #IGBT_Module, #IGBT, #CM200DX_24S
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Manufacturer Part Number: CM200DX-24S

Rohs Code: Yes

Part Life Cycle Code: Active

Ihs Manufacturer: Mitsubishi ELECTRIC CORP

Package Description: FLANGE MOUNT, R-XUFM-X7

Pin Count: 11

ECCN Code: EAR99

Manufacturer: Mitsubishi Electric

Risk Rank: 5.67

Additional Feature: UL RECOGNIZED

Case Connection: ISOLATED

Collector Current-Max (IC): 200 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X7

Number of Elements: 2

Number of Terminals: 7

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Peak Reflow Temperature (Cel): NOT SPECIFIED

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 1500 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Time

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-11

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