#MITSUBISHI, #CM200DY_12NFH, #IGBT_Module, #IGBT, CM200DY-12NFH Module Transistor N Channel 200A 600V 650W Module; CM200DY-12NFH
CM200DY-12NFH
Features
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:200A
Collector current Icp:400A
Collector power dissipation Pc:650W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Weight 310g
Module Transistor N Channel 200A 600V 650W Module