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MITSUBISHI CM200DY-28H IGBT Module

CM200DY-28H

#MITSUBISHI, #CM200DY_28H, #IGBT_Module, #IGBT, CM200DY-28H Mitsubishi Insulated Gate Bipolar Transistor, 200A, 1400V N-Channel

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$
· Date Code: 2024+
. Available Qty: 369
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CM200DY-28H Specification

Sell CM200DY-28H, #MITSUBISHI #CM200DY-28H Stock, CM200DY-28H Mitsubishi Insulated Gate Bipolar Transistor, 200A, 1400V N-Channel, #IGBT_Module, #IGBT, #CM200DY_28H
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CM200DY-28H Product details

Description:

Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Features:

Low Drive Power

Low VCE(sat)

Discrete Super-Fast Recovery Free-Wheel Diode

High Frequency Operation

Isolated Baseplate for Easy Heat Sinking

Applications:

AC Motor Control

Motion/Servo Control

UPS

Welding Power Supplies

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Junction Temperature Tj -40 to 150 °C

Storage Temperature Tstg -40 to 125 °C

Collector-Emitter Voltage (G-E SHORT) VCES 1400 Volts

Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts

Collector Current (Tc = 25°C) IC 200 Amperes

Peak Collector Current (Tj ≤ 150°C) ICM 400* Amperes

Mounting Torque,M5 Mounting 1.96~2.94 N·m

Maximum Collector Dissipation (Tc = 25°C) Pc 1500 Watts

Weight 400 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts

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