#MITSUBISHI, #CM200DY_28H, #IGBT_Module, #IGBT, CM200DY-28H Mitsubishi Insulated Gate Bipolar Transistor, 200A, 1400V N-Channel
CM200DY-28H Product details
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1400 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 200 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 400* Amperes
Mounting Torque,M5 Mounting 1.96~2.94 N·m
Maximum Collector Dissipation (Tc = 25°C) Pc 1500 Watts
Weight 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts