#Mitsubishi, #CM300DU_12H, #IGBT_Module, #IGBT, CM300DU-12H Insulated Gate Bipolar Transistor 300A I(C) 600V V(BR)CES N-Channel
Manufacturer Part Number: CM300DU-12H
Manufacturer: Mitsubishi ELECTRIC CORP
Package Description: FLANGE MOUNT, R-XUFM-X7
Additional Feature: SUPER FAST RECOVERY
Case Connection: ISOLATED
Collector Current-Max (IC): 300 A
Collector-Emitter Voltage-Max: 600 V
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X7
Number of Elements: 2
Number of Terminals: 7
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 890 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Insulated Gate Bipolar Transistor 300A I(C) 600V V(BR)CES N-Channel