#Mitsubishi, #CM300DY_28H, #IGBT_Module, #IGBT, CM300DY-28H Insulated Gate Bipolar Transistor 300A I(C) 1400V V(BR)CES N-Channel; CM300DY-28H
Manufacturer Part Number: CM300DY-28H
Package Description: FLANGE MOUNT, R-XUFM-X7
Manufacturer: Mitsubishi Power Semiconductors
Case Connection: ISOLATED
Collector Current-Max (IC): 300 A
Collector-Emitter Voltage-Max: 1400 V
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X7
Number of Elements: 2
Number of Terminals: 7
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 2100 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Insulated Gate Bipolar Transistor 300A I(C) 1400V V(BR)CES N-Channel