#Mitsubishi, #CM400C1Y_24S, #IGBT_Module, #IGBT, CM400C1Y-24S Mitsubishi high power seitching use insulated type1200V 350A
Collector current IC ..........................................350A
Collector-emitter voltage VCES .........................1200V
Maximum junction temperature Tjmax ..............175°C
●Flat base Type
●Copper base plate
●RoHS Directive compliance
●DC current rating is limited by power terminals
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :350A
Collector current Icp 1ms Tc=25°C :800A
Collector power dissipation Pc:2670W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5~4.5 N·m
Weight 580 g