#Mitsubishi, #CM400DU_5F, #IGBT_Module, #IGBT, CM400DU-5F Mitsubishi Trench Gate Design Dual IGBTMOD™ 400 Amperes/250 Volts
CM400DU-5F Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications.
Each module consistsof two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
.Low Drive Power
.Low VCE(sat)
.Discrete Super-Fast Recovery Free-Wheel Diode
.Isolated Baseplate for Easy Heat Sinking
Applications:
.AC Motor Control
.Motion/Servo Control
.Welding Power Supplies
.Laser Power Supplies
Ordering Information:
Example: Select the complete module number you desire from the table - i.e. CM400DU-5F is a 250V (VCES), 400 Ampere Dual IGBTMOD™ Power Module.
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 250 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 400 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 800* Amperes
Emitter Current** (Tc = 25°C) IE 400 Amperes
Peak Emitter Current** IEM 800* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc 890 Watts
Weight 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts