Mitsubshi CM50E3U-12H IGBT Module

Description: Mitsubishi IGBT Modules are de-signed for use in switching applica-tions. Each module consists of oneIGBT having a reverse-connectedsuper-fast recovery free-wheel di-ode and an anode-collector con-nected super-fast recovery free-wheel diode. All components andinterconnects are isolated from theheat sinking baseplate, offeringsimplified system assembly andthermal management. Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:1200V Gate-Emitter voltage VGES:±20V Collector current Ic:50A Collector current Icp:100A Collector power dissipation Pc:400W Collector-Emitter voltage VCES:2500V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C Mounting M5 screw torque 2.5~3.5 N·m Weight Typical value 310g