Mitsubishi CM50E3Y-24E IGBT Module

cm50e3y-24e Description

Description:

Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel diode and an anode-collector connected super-fast recovery freewheel diode. AlL components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and

thermal management.

Features:

Low Drive Power

Low VCE(sat)

Discrete Super-Fast Recovery

Free-Wheel Diode

High Frequency Operation

Isolated Baseplate for Easy

Heat Sinking

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :50A

Collector current Icp 1ms Tc=25°C :100A

Collector power dissipation Pc:400W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque M5 2.5~3.5 N·m

Weight 310g