#Mitsubishi, #CM50TL_24NF, #IGBT_Module, #IGBT, CM50TL-24NF Mitsubishi Insulated Gate Bipolar Transistor, 50A, 1200V, N-Channel, MODULE-20
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
VCES Collector-Emitter Voltage VD-15V,VCIN-15V 1200V
VGES Gate-Emitter voltage:±20V
±lc Collector Current Tc-25C 50A
±ICP Collector Current (Peak) TC-25C 100A
PC Collector Dissipation TC-25C 390W
Tj Junction Temperature -20~+100°C
Tstg Storage Temperature -40~+125°C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500V
Mounting screw torque 2.5~3.5 N·m
Weight 350g