Mitsubishi CM600HA-12H IGBT Module

Description:Powerex IGBTMOD™ Modulesare designed for use in switchingapplications. Each module consistsof one IGBT Transistor in a singleconfiguration with a reverse-connected super-fast recoveryfree-wheel diode. All componentsand interconnects are isolatedfrom the heat sinking baseplate,offering simplified system assem-bly and thermal management.

Features:

. Low Drive Power

. Low VCE(sat)

. Discrete Super-Fast Recovery(70ns) Free-Wheel Diode

. High Frequency Operation(20-25kHz)

. Isolated Baseplate for EasyHeat Sinking

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts

Gate-Emitter Voltage VGES ±20 Volts

Collector Current IC 600 Amperes

Peak Collector Current ICM 1200*Amperes

Diode Forward Current IF 600 Amperes

Diode Forward Surge Current IFM 1200*Amperes

Power Dissipation Pd 2100 Watts

Collector-Emitter voltage VCES:2500V

Junction Temperature Tj–40 to 150°C

Storage Temperature Tstg–40 to 125°C

Max. Mounting Torque M8 Terminal Screws 95 in-lb

Max. Mounting Torque M6 Mounting Screws 26 in-lb

Module Weight (Typical) 560 Grams