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MITSUBISHI CM600HU-12H IGBT Module

CM600HU-12H

#MITSUBISHI, #CM600HU_12H, #IGBT_Module, #IGBT, CM600HU-12H Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel; CM600HU-12H

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$
· Date Code: 11+
. Available Qty: 144
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CM600HU-12H Specification

Sell CM600HU-12H, #MITSUBISHI #CM600HU-12H Stock, CM600HU-12H Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel; CM600HU-12H, #IGBT_Module, #IGBT, #CM600HU_12H
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URL: https://www.slw-ele.com/cm600hu-12h.html

Manufacturer Part Number: CM600HU-12H

Part Life Cycle Code: Obsolete

Ihs Manufacturer: Powerex INC

Package Description: FLANGE MOUNT, R-XUFM-X4

Manufacturer: Powerex Power Semiconductors

Risk Rank: 5.16

Case Connection: ISOLATED

Collector Current-Max (IC): 600 A

Collector-Emitter Voltage-Max: 600 V

Configuration: SINGLE WITH BUILT-IN DIODE

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X4

Number of Elements: 1

Number of Terminals: 4

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 1560 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Application: MOTOR CONTROL

Transistor Element Material: SILICON

Turn-off Time-Nom (toff): 700 ns

Turn-on Time-Nom (ton): 300 ns

VCEsat-Max: 3 V

Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel

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