#MITSUBISHI, #CM600HU_12H, #IGBT_Module, #IGBT, CM600HU-12H Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel; CM600HU-12H
Manufacturer Part Number: CM600HU-12H
Part Life Cycle Code: Obsolete
Ihs Manufacturer: Powerex INC
Package Description: FLANGE MOUNT, R-XUFM-X4
Manufacturer: Powerex Power Semiconductors
Risk Rank: 5.16
Case Connection: ISOLATED
Collector Current-Max (IC): 600 A
Collector-Emitter Voltage-Max: 600 V
Configuration: SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X4
Number of Elements: 1
Number of Terminals: 4
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 1560 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Application: MOTOR CONTROL
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 700 ns
Turn-on Time-Nom (ton): 300 ns
VCEsat-Max: 3 V
Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel