Name: Mitsubishi CM600YE2P-12F IGBT_Module
Brand: Mitsubishi
SKU: CM600YE2P-12F
Price: 76 USD
Availability: InStock

#Mitsubishi, #CM600YE2P_12F, #IGBT_Module, #IGBT, Mitsubishi IGBT-Module 1200V 600A

· Categories: IGBT Module

· Manufacturer: Mitsubishi

· Price: US$ 76

· Date Code: 2022+

. Available Qty: 452

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Tags: 1200v 600a cm600 diode mitsubishi

CM600YE2P-12F Specification

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The CM600YE2P-12F is a Mitsubishi IGBT (Insulated Gate Bipolar Transistor) module designed for various high-power applications. It contains a single IGBT in a single configuration along with a reverse-connected super-fast recovery free-wheel diode. This module is suitable for applications such as AC motor control, motion/servo control, UPS (Uninterruptible Power Supplies), and welding power supplies.

Absolute Maximum Ratings:

Junction Temperature (Tj): The module can operate in a temperature range from -40 to 150 ℃.

Storage Temperature (Tstg): It can be stored in temperatures ranging from -40 to 125 ℃.

Collector-Emitter Voltage (VCES): The maximum voltage across the collector and emitter is 1200 Volts.

Gate-Emitter Voltage (VGES): The maximum gate-emitter voltage is ±20 Volts.

Collector Current (IC): The maximum continuous collector current at a temperature of 25℃ is 600 Amperes.

Peak Collector Current (ICM): The maximum peak collector current at a junction temperature ≤ 150℃ is 1200 Amperes.

Emitter Current (IE): The maximum emitter current at a temperature of 25℃ is 600 Amperes.

Peak Emitter Current (IEM): The maximum peak emitter current is 1200 Amperes.

Maximum Collector Dissipation (Pc): The module can dissipate a maximum power of 4100 Watts at a temperature of 25℃.

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Mitsubishi CM600YE2P-12F IGBT Module

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CM600YE2P-12F Specification

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