#MITSUBISHI, #CM75BU_12H, #IGBT_Module, #IGBT, CM75BU-12H Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-12; CM75BU-12H
Manufacturer Part Number: CM75BU-12HPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X12Pin Count: 12Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.21Case Connection: ISOLATEDCollector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X12Number of Elements: 4Number of Terminals: 12Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 310 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-12