#MITSUBISHI, #CM75E3U_12H, #IGBT_Module, #IGBT, CM75E3U-12H Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel;
Manufacturer Part Number: CM75E3U-12H
Pbfree Code: Yes
Package Description: FLANGE MOUNT, R-XUFM-X5
Manufacturer: Mitsubishi
Case Connection: ISOLATED
Collector Current-Max (IC): 75 A
Collector-Emitter Voltage-Max: 600 V
Configuration: SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X5
Number of Elements: 1
Number of Terminals: 5
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 310 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel