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MITSUBISHI CM75E3U-12H IGBT Module

#MITSUBISHI, #CM75E3U_12H, #IGBT_Module, #IGBT, CM75E3U-12H Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel;

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$ 45
· Date Code: 2022+
. Available Qty: 136
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CM75E3U-12H Specification

Sell CM75E3U-12H, #MITSUBISHI #CM75E3U-12H Stock, CM75E3U-12H Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel; , #IGBT_Module, #IGBT, #CM75E3U_12H
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/cm75e3u-12h.html

Manufacturer Part Number: CM75E3U-12H

Pbfree Code: Yes

Package Description: FLANGE MOUNT, R-XUFM-X5

Manufacturer: Mitsubishi

Case Connection: ISOLATED

Collector Current-Max (IC): 75 A

Collector-Emitter Voltage-Max: 600 V

Configuration: SINGLE WITH BUILT-IN DIODE

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X5

Number of Elements: 1

Number of Terminals: 5

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Peak Reflow Temperature (Cel): NOT SPECIFIED

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 310 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Time

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel

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