Mitsubishi CM75E3U-24H IGBT Module

CM75E3U-24H Description

Mitsubishi IGBT Modules are designed for use in switching applications. Each module

consists of one IGBT having a reverse-connected super-fast recovery free-wheel di-

ode and an anode-collector con-nected super-fast recovery free-wheel diode. All components and

interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and

thermal management.

Features:

Low Drive Power

Low VCE(sat)

Discrete Super-Fast RecoveryFree-Wheel Diode

High Frequency Operation

Isolated Baseplate for Easy Heat Sinking

Application:Brake

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Junction Temperature Tj -40 to 150°C

Storage Temperature Tstg -40 to 125°C

Collector-Emitter Voltage (G-E SHORT) VCES 1200Volts

Gate-Emitter Voltage (C-E SHORT) VGES ±20Volts

Collector Current (Tc = 25°C)IC 75Amperes

Peak Collector Current ICM 150*Amperes

Emitter Current** (Tc = 25°C) IE 75Amperes

Peak Emitter Current**IEM 150*Amperes

Maximum Collector Dissipation (Tc = 25°C, Tj≤ 150°C) Pc 600Watts

Mounting Torque, M5 Main Terminal 2.5 ~ 3.5N · m

Mounting Torque, M6 Mounting 3.5 ~ 4.5N · m

Weight 310Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500Vrms