#Powerex, #CM75TU_12F, #IGBT_Module, #IGBT, Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel
Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,offering simplified system assembly and thermal management.
Features:
. Low Drive Power
. Low VCE(sat)
. Discrete Super-Fast Recovery Free-Wheel Diode
. Isolated Baseplate for Easy Heat Sinking
Applications:
. AC Motor Control
. UPS
. Battery Powered Supplies
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:75A
Collector current Icp:150A
Collector power dissipation Pc:290 W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting M5 screw torque 31 in-lb
Weight Typical value 570g