#Mitsubishi, #CM800HA_66H, #IGBT_Module, #IGBT, CM800HA-66H Insulated Gate Bipolar Transistor, 800A I(C), 3300V V(BR)CES, N-Channel, MODULE-7; CM800HA-66H
CM800HA-66H Product details
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC...................................................................800A
●VCES .......................................................3300V
●Insulated Type
●1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:3300V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :800A
Collector current Icp 1ms Tc=25°C :1600A
Collector power dissipation Pc:6940W
Isolation Voltage VIsol (AC 1 minute) :6000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 0.88~8.24 N·m
Weight 1.5 kg