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MITSUBISHI CM800HB-50H IGBT Module

CM800HB-50H

#MITSUBISHI, #CM800HB_50H, #IGBT_Module, #IGBT, CM800HB-50H Mitsubishi Insulated Gate Bipolar Transistor, 800A I(C), 2500V V(BR)CES, N-Channel, MODULE-7; CM800HB-50H

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$
· Date Code: 2024+
. Available Qty: 340
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CM800HB-50H Specification

Sell CM800HB-50H, #MITSUBISHI #CM800HB-50H Stock, CM800HB-50H Mitsubishi Insulated Gate Bipolar Transistor, 800A I(C), 2500V V(BR)CES, N-Channel, MODULE-7; CM800HB-50H, #IGBT_Module, #IGBT, #CM800HB_50H
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CM800HB-50H Product details

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

● IC...................................................................800A

● VCES ....................................................... 2500V

● Insulated Type

● 1-element in a pack

APPLICATION

Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:2500V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :800A

Collector current Icp 1ms Tc=25°C :1600A

Collector power dissipation Pc:10400W

Isolation Voltage VIsol (AC 1 minute) :6000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting torque Mounting screw M6 2.84~6.0 N·m

Mass Typical value 1.5 kg

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