#MITSUBISHI, #CM800HB_50H, #IGBT_Module, #IGBT, CM800HB-50H Mitsubishi Insulated Gate Bipolar Transistor, 800A I(C), 2500V V(BR)CES, N-Channel, MODULE-7; CM800HB-50H
CM800HB-50H Product details
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
● IC...................................................................800A
● VCES ....................................................... 2500V
● Insulated Type
● 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:2500V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :800A
Collector current Icp 1ms Tc=25°C :1600A
Collector power dissipation Pc:10400W
Isolation Voltage VIsol (AC 1 minute) :6000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting torque Mounting screw M6 2.84~6.0 N·m
Mass Typical value 1.5 kg