#Mitsubishi, #CM900DUC_24S, #IGBT_Module, #IGBT, Mitsubishi IGBT MODULE 900A/1200V/175°C
Mitsubishi CM900DUC-24S
HIGH POWER SWITCHING USE INSULATED TYPE
Collector current IC ..........................................900A
Collector-emitter voltage VCES .........................1200V
Maximum junction temperature Tjmax ..............175°C
●Flat base Type
●Copper base plate (non-plating)
●RoHS Directive compliant
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:900A
Collector current Icp:1800A
Collector power dissipation Pc:6520W
Collector-Emitter voltage VCES:4000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m