Mitsubishi CM900HC-90H IGBT Module

Mitsubishi CM900HC-90H is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for use in a wide range of industrial applications. This module(CM900HC-90H) has maximum voltage rating 1200V & current rating 900A, widely use in high-power motor drives, power supplies, and other industrial equipment.

CM900HC-90H is built with a high-temperature, rugged construction, It features low on-state voltage & fast switching speeds, help to minimize power losses and improve efficiency.

CM900HC-90H Features:

● IC.........................900 A

● VCES .................. 4500 V

● Insulated Type

● 1-element in a Pack

● AISiC Base plate

MAXIMUM RATINGS

VCES Collector-emitter voltage VGE = 0V, Tj = 25°C 4500V

VGES Gate-emitter voltage VCE = 0V, Tj = 25°C ± 20V

IC Collector current DC, Tc = 100°C 900A

ICM Collector current Pulse (Note 1) 1800A

Pc Maximum power dissipation (Note 3) Tc = 25°C, IGBT part 11900W

Viso Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. 6000V

Tj Junction temperature –40 ~ +150°C

Top Operating temperature Pulse (Note 1) –40 ~ +125°C

Tstg Storage temperature –40 ~ +125°C

Tpsc Maximum short circuit pulse width VCC = 3200V, VCE ≤ VCES, VGE = 15V, Tj = 125°C 10µs