Infineon DD175N34K IGBT Module

DD175N Product details

Thermis

Key Parameters

VDRM / VRRM 2800 - 3400 V

IFAVM 175 A (TC=100 °C)

IFSM 3570A (T 4500 A C=55°C)

VT0 0,9 V

rT 1,8 mΩ

RthJC 0,17 K/W

Base plate 50 mm

Weight 800 g

Features

• Pressure contact technology for high reliability

• Industrial standard package

• Electrically insulated base plate

Typical Applications

• Rectifier for drives applications

• Rectifiers for UPS

• Battery chargers

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

VCES Collector-Emitter Voltage 3400V

VGES Gate-Emitter voltage:±20V

±lc Collector Current Tc= 100°C 175A

±ICP Collector Current (Peak) 350A

PC Collector Dissipation TC= 25°C 170W

Tj Junction Temperature -20~+100°C

Tstg Storage Temperature -40~+125°C

Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500V

Mounting screw torque 5~12 N·m

Weight 800g