#EUPEC, #DD350N12, #IGBT_Module, #IGBT, DD350N12 Rectifier Diode, 1 Phase, 2 Element, 350A, 1200V V(RRM), Silicon, MODULE-3; DD350N12
Manufacturer Part Number: DD350N12KRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: R-PUFM-X3ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: Infineon Technologies AGRisk Rank: 5.69Additional Feature: HIGH RELIABILITY, UL RECOGNIZEDApplication: MEDIUM POWERCase Connection: ISOLATEDConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 1.28 VJESD-30 Code: R-PUFM-X3Moisture Sensitivity Level: 1Non-rep Pk Forward Current-Max: 11000 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 3Operating Temperature-Max: 150 °COperating Temperature-Min: -40 °COutput Current-Max: 350 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDReference Standard: IEC-61140Rep Pk Reverse Voltage-Max: 1200 VReverse Current-Max: 30000 µASubcategory: Rectifier DiodesSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Rectifier Diode, 1 Phase, 2 Element, 350A, 1200V V(RRM), Silicon, MODULE-3