#Diodes Inc, #DDTD114GC_7_F, #IGBT_Module, #IGBT, DDTD114GC-7-F Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-
Manufacturer Part Number: DDTD114GC-7-FPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3ECCN Code: EAR99HTS Code: 8541.21.00.75Manufacturer: Diodes IncorporatedRisk Rank: 5.43Additional Feature: BUILT IN BIAS RESISTORCollector Current-Max (IC): 0.5 ACollector-Emitter Voltage-Max: 40 VConfiguration: SINGLE WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 56JESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.2 WQualification Status: Not QualifiedSubcategory: BIP General Purpose Small SignalSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3