Introduction
IGBT (Insulated Gate Bipolar Transistor) modules are crucial in high-power electronic applications due to their efficiency and fast switching capabilities. Fuji Electric products 1D500A-030 and the 1D500A-030A. We are going to explain their key differences and help user in selecting the appropriate module based on specific project requirements.
Comparison of Fuji 1D500A-030 and 1D500A-030A
Below is a table summarizing the key parameters and characteristics of the two IGBT modules:
Feature | Fuji 1D500A-030 | Fuji 1D500A-030A |
---|---|---|
Collector-Emitter Voltage (Vces) | 400V | 400V |
Gate-Emitter Voltage (VGES) | ±20V | ±20V |
Continuous Collector Current (Ic) | 500A | 500A |
Pulsed Collector Current (Icp) | 1000A | 1000A |
Collector Power Dissipation (Pc) | 2500W | 2500W |
Maximum Collector-Emitter Voltage (VCES) | 2500V | 2500V |
Operating Junction Temperature (Tj) | +150°C | +150°C |
Storage Temperature (Tstg) | -40 to +125°C | -40 to +125°C |
Mounting Screw Torque | 4.5 N·m | 4.5 N·m |
Weight | 365g | 365g |
Rise Time (tr) | Not specified | 2000 ns |
Turn-off Time (toff) | Not specified | 16000 ns |
Turn-on Time (ton) | Not specified | 2000 ns |
Sub Category | General Purpose Power | General Purpose Power |
Qualification Status | Discontinued | Not Qualified |
Terminal Form | Unspecified | Unspecified |
Terminal Position | Upper | Upper |
Surface Mount | No | No |
Power Dissipation (Max) | 2500W | 2500W |
Key Differences
Applications
Both modules are designed for high-power applications, including:
Selecting the Right Module
When choosing between the Fuji 1D500A-030 and 1D500A-030A, consider the following factors:
Conclusion
Both the Fuji 1D500A-030 and 1D500A-030A IGBT modules offer robust solutions for high-power switching applications.