#DYNEX, #DIM1200FSM12_A, #IGBT_Module, #IGBT, DIM1200FSM12-A Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, F, 7 PIN; DIM1200FSM12
Manufacturer Part Number: DIM1200FSM12-A000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPackage Description: FLANGE MOUNT, R-PUFM-X7Pin Count: 7Manufacturer: Dynex SemiconductorRisk Rank: 5.73Additional Feature: HIGH RELIABILITYCase Connection: ISOLATEDCollector Current-Max (IC): 1200 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXJESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, F, 7 PIN