#DYNEX, #DIM300WHS12_E, #IGBT_Module, #IGBT, DIM300WHS12-E Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, W, MODULE-7; DIM300WHS12-E
Manufacturer Part Number: DIM300WHS12-E000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: Dynex SemiconductorRisk Rank: 5.65Case Connection: ISOLATEDCollector Current-Max (IC): 300 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, W, MODULE-7