#Diodes Inc, #DMC6070LFDH_7, #IGBT_Module, #IGBT, DMC6070LFDH-7 Small Signal Field-Effect Transistor, 3.1A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-o
Manufacturer Part Number: DMC6070LFDH-7Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, S-PDSO-N8ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 5.71Additional Feature: HIGH RELIABILITYConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 3.1 ADrain Current-Max (ID): 3.1 ADrain-source On Resistance-Max: 0.085 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-PDSO-N8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNEL AND P-CHANNELPower Dissipation-Max (Abs): 1.4 WReference Standard: AEC-Q101Subcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: NO LEADTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Small Signal Field-Effect Transistor, 3.1A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, V-DFN3030-8, 8 PIN