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Diodes Inc DMG4932LSD-13 IGBT Module

DMG4932LSD-13

#Diodes Inc, #DMG4932LSD_13, #IGBT_Module, #IGBT, DMG4932LSD-13 Power Field-Effect Transistor, 9.5A I(D), 30V, 0.015ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semico

· Categories: IGBT Module
· Manufacturer: Diodes Inc
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1029
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DMG4932LSD-13 Specification

Sell DMG4932LSD-13, #Diodes Inc #DMG4932LSD-13 Stock, DMG4932LSD-13 Power Field-Effect Transistor, 9.5A I(D), 30V, 0.015ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8; DMG4932LSD-13, #IGBT_Module, #IGBT, #DMG4932LSD_13
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/dmg4932lsd-13.html

Manufacturer Part Number: DMG4932LSD-13Pbfree Code: YesPart Life Cycle Code: End Of LifeIhs Manufacturer: DIODES INCPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 6.4Additional Feature: HIGH RELIABILITYConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 9.5 ADrain Current-Max (ID): 9.5 ADrain-source On Resistance-Max: 0.015 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1.19 WPulsed Drain Current-Max (IDM): 40 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Power Field-Effect Transistor, 9.5A I(D), 30V, 0.015ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8

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