#Diodes Inc, #DMN2019UTS_13, #IGBT_Module, #IGBT, DMN2019UTS-13 Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; DMN2019UTS-13
Manufacturer Part Number: DMN2019UTS-13Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 1.7Drain Current-Max (Abs) (ID): 5.4 AFET Technology: METAL-OXIDE SEMICONDUCTORJESD-609 Code: e3Moisture Sensitivity Level: 1Operating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.78 WSubcategory: FET General Purpose PowersSurface Mount: YESTerminal Finish: Matte Tin (Sn) Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET