#Panasonic Electronic Components - Semiconductor Products, #DRA2114Y0L, #IGBT_Module, #IGBT, DRA2114Y0L Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND
Manufacturer Part Number: DRA2114Y0LRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: PANASONIC CORPPackage Description: SMALL OUTLINE, R-PDSO-G3ECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: Panasonic Electronic ComponentsRisk Rank: 1.74Additional Feature: BUILT IN BIAS RESISTOR RATIO IS 4.7Collector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 50 VConfiguration: SINGLE WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 80JEDEC-95 Code: TO-236AAJESD-30 Code: R-PDSO-G3Number of Elements: 1Number of Terminals: 3Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: PNPSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN