#Rohm Semiconductor, #EMF32T2R, #IGBT_Module, #IGBT, EMF32T2R Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor
Manufacturer Part Number: EMF32T2RPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-F6Pin Count: 6ECCN Code: EAR99Manufacturer: ROHM SemiconductorRisk Rank: 7.95Collector Current-Max (IC): 0.1 AConfiguration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODEDC Current Gain-Min (hFE): 100DS Breakdown Voltage-Min: 30 VDrain Current-Max (ID): 0.1 ADrain-source On Resistance-Max: 8 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F6JESD-609 Code: e3/e2Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.15 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: TIN/TIN COPPERTerminal Form: FLATTerminal Position: DUALTime Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EMT6, 6 PIN