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ON Semiconductor EMF5XV6T5G IGBT Module

EMF5XV6T5G

#ON Semiconductor, #EMF5XV6T5G, #IGBT_Module, #IGBT, EMF5XV6T5G Complementary Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 8000-REEL; EMF5XV6T5G

· Categories: IGBT Module
· Manufacturer: ON Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 80214
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EMF5XV6T5G Specification

Sell EMF5XV6T5G, #ON Semiconductor #EMF5XV6T5G Stock, EMF5XV6T5G Complementary Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 8000-REEL; EMF5XV6T5G, #IGBT_Module, #IGBT, #EMF5XV6T5G
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/emf5xv6t5g.html

Manufacturer Part Number: EMF5XV6T5GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-F6Pin Count: 6Manufacturer Package Code: 463A-01ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.31Additional Feature: BUILT IN BIAS RESISTOR RATIO 1Collector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 50 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 80JESD-30 Code: R-PDSO-F6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPN AND PNPPower Dissipation-Max (Abs): 0.5 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: FLATTerminal Position: DUALTime Complementary Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 8000-REEL

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