#FUJI, #ETG81_050, #IGBT_Module, #IGBT, FUJI IGBT-Module Power Bipolar Transistor600V 30A I(C), 1-Element;
FUJI ETG81-050 is a high-speed switching transistor module designed for use in power switching applications such as motor control & power supply circuits. It is designed to handle high voltage & high current, with maximum collector current 50A & maximum collector-emitter voltage 600V.
ETG81-050 is made up of multiple bipolar transistors connected in parallel, allowing it to handle higher current loads than single transistor.
ETG81-050 features built-in protection circuitry to prevent overcurrent or overheating damage.
Manufacturer Part Number: ETG81-050 Fuji
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:15A
Collector current Icp:30A
Collector power dissipation Pc:120W
Collector-Emitter voltage VCES:600V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m