#FUJI, #ETN01_055, #IGBT_Module, #IGBT, ETN01-055 Power Bipolar Transistor, 200A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon; ETN01-055
Manufacturer Part Number: ETN01-055Part Life Cycle Code: ObsoleteIhs Manufacturer: COLLMER SEMICONDUCTOR INCPackage Description: FLANGE MOUNT, R-XUFM-X2Manufacturer: Fuji Electric Co LtdRisk Rank: 5.82Collector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 550 VConfiguration: SINGLE WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 8JESD-30 Code: R-XUFM-X2Number of Elements: 1Number of Terminals: 2Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Bipolar Transistor, 200A I(C), 550V V(BR)CEO, 1-Element, NPN, Silicon