#FUJI, #EV1277, #IGBT_Module, #IGBT, EV1277 Power Bipolar Transistor, 30A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin; EV1277
Manufacturer Part Number: EV1277Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-X6Manufacturer: Fuji Electric Co LtdRisk Rank: 5.82Collector Current-Max (IC): 30 ACollector-Emitter Voltage-Max: 1000 VConfiguration: COMPLEXDC Current Gain-Min (hFE): 100Fall Time-Max (tf): 2000 nsJESD-30 Code: R-PUFM-X6Number of Elements: 2Number of Terminals: 6Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 300 WQualification Status: Not QualifiedRise Time-Max (tr): 3000 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Bipolar Transistor, 30A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin