Selecting the appropriate Insulated Gate Bipolar Transistor (IGBT) module is critical for achieving optimal performance in power electronic applications. Here, we compare two IGBT modules from Fuji Electric: the 6MBI100FC-060 and the 2MBI200U4H-120. Each module has distinct characteristics tailored to different power requirements and applications.
The Fuji 6MBI100FC-060 is designed for medium power applications, offering reliable performance and efficient switching.
Parameter | Value |
---|---|
Collector-Emitter Voltage (V_CES) | 600 V |
Nominal Collector Current (I_C nom) | 100 A |
Maximum Collector Current (I_C) | 200 A |
Total Power Dissipation (P_tot) | 390 W |
Gate-Emitter Peak Voltage (V_GES) | +/-20 V |
Operating Junction Temperature (T_vj op) | -40°C to 150°C |
Isolation Test Voltage (V_ISOL) | 2500 V RMS, f = 50 Hz, t = 1 min |
Weight | 150 g |
The 6MBI100FC-060 is ideal for:
The Fuji 2MBI200U4H-120 is a high-power IGBT module suitable for applications requiring high current handling and robust thermal performance.
Parameter | Value |
---|---|
Collector-Emitter Voltage (V_CES) | 1200 V |
Nominal Collector Current (I_C nom) | 200 A |
Maximum Collector Current (I_C) | 400 A |
Total Power Dissipation (P_tot) | 1040 W |
Gate-Emitter Peak Voltage (V_GES) | +/-20 V |
Operating Junction Temperature (T_vj op) | -40°C to 150°C |
Isolation Test Voltage (V_ISOL) | 2500 V RMS, f = 50 Hz, t = 1 min |
Weight | 300 g |
The 2MBI200U4H-120 is suitable for:
When choosing between the Fuji 6MBI100FC-060 and the Fuji 2MBI200U4H-120, consider the following factors:
Both modules provide reliable performance, but the choice depends on the specific requirements of your application. For more details, visit the respective product pages: 6MBI100FC-060 and 2MBI200U4H-120.