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Evaluating IGBT Modules: Fuji 6MBI100FC-060 and Fuji 2MBI200U4H-120

Posted on: 11/27/2024

Selecting the appropriate Insulated Gate Bipolar Transistor (IGBT) module is critical for achieving optimal performance in power electronic applications. Here, we compare two IGBT modules from Fuji Electric: the 6MBI100FC-060 and the 2MBI200U4H-120. Each module has distinct characteristics tailored to different power requirements and applications.

Fuji 6MBI100FC-060 IGBT Module

The Fuji 6MBI100FC-060 is designed for medium power applications, offering reliable performance and efficient switching.

Key Features and Specifications

  1. Voltage and Current Ratings:
    • Collector-Emitter Voltage (V_CES): 600V
    • Nominal Collector Current (I_C nom): 100A
  2. Power Dissipation:
    • Total Power Dissipation (P_tot): 390W
  3. Temperature Ratings:
    • Operating Junction Temperature (T_vj op): -40°C to 150°C
    • Storage Temperature (T_stg): -40°C to 125°C
  4. Construction and Design:
    • Low saturation voltage
    • Short circuit capability

Technical Specifications

Parameter Value
Collector-Emitter Voltage (V_CES) 600 V
Nominal Collector Current (I_C nom) 100 A
Maximum Collector Current (I_C) 200 A
Total Power Dissipation (P_tot) 390 W
Gate-Emitter Peak Voltage (V_GES) +/-20 V
Operating Junction Temperature (T_vj op) -40°C to 150°C
Isolation Test Voltage (V_ISOL) 2500 V RMS, f = 50 Hz, t = 1 min
Weight 150 g

Applications

The 6MBI100FC-060 is ideal for:

  • Inverters: Ensures efficient power conversion in various inverter applications.
  • Motor Controls: Provides reliable performance in controlling motor operations.
  • Power Supplies: Enhances stability and efficiency in power supply systems.

 

Fuji 2MBI200U4H-120 IGBT Module

The Fuji 2MBI200U4H-120 is a high-power IGBT module suitable for applications requiring high current handling and robust thermal performance.

Key Features and Specifications

  1. Voltage and Current Ratings:
    • Collector-Emitter Voltage (V_CES): 1200V
    • Nominal Collector Current (I_C nom): 200A
  2. Power Dissipation:
    • Total Power Dissipation (P_tot): 1040W
  3. Temperature Ratings:
    • Operating Junction Temperature (T_vj op): -40°C to 150°C
    • Storage Temperature (T_stg): -40°C to 125°C
  4. Construction and Design:
    • Low inductance module design
    • Integrated thermal sensors for precise temperature monitoring

Technical Specifications

Parameter Value
Collector-Emitter Voltage (V_CES) 1200 V
Nominal Collector Current (I_C nom) 200 A
Maximum Collector Current (I_C) 400 A
Total Power Dissipation (P_tot) 1040 W
Gate-Emitter Peak Voltage (V_GES) +/-20 V
Operating Junction Temperature (T_vj op) -40°C to 150°C
Isolation Test Voltage (V_ISOL) 2500 V RMS, f = 50 Hz, t = 1 min
Weight 300 g

Applications

The 2MBI200U4H-120 is suitable for:

  • Industrial Drives: Enhances performance in heavy-duty motor drive applications.
  • Renewable Energy Systems: Crucial for efficient energy conversion in solar and wind power systems.
  • High-Power Inverters: Ensures robust performance in high-power inverter applications.

 

Choosing the Right IGBT Module

When choosing between the Fuji 6MBI100FC-060 and the Fuji 2MBI200U4H-120, consider the following factors:

  • Voltage and Current Requirements: The 2MBI200U4H-120 offers higher voltage and current capacity, making it suitable for more demanding applications compared to the 6MBI100FC-060.
  • Power Dissipation: Higher power dissipation capabilities of the 2MBI200U4H-120 make it more suitable for applications with significant heat generation.
  • Application Specifics: Match the module’s features to the specific needs of your application, whether it be industrial drives, renewable energy systems, or inverters.

Both modules provide reliable performance, but the choice depends on the specific requirements of your application. For more details, visit the respective product pages: 6MBI100FC-060 and 2MBI200U4H-120.