Sell F4-100R12KS4, #Infineon #F4-100R12KS4 Stock, Insulated Gate Bipolar Transistor, 130A I(C), 1200V V(BR)CES, N-Channel, MODULE-26, #IGBT_Module, #IGBT, #F4_100R12KS4
Email: sales@shunlongwei.com
URL:
https://www.slw-ele.com/f4-100r12ks4.html
Maximum Ratings and Characteristics of the Device:
- Absolute maximum ratings are specified at a temperature of 25°C unless mentioned otherwise.
- Collector-Emitter Voltage (VCES) is rated at 1200 V with a junction temperature of 25°C.
- The Continuous DC Collector Current (IC nom) is 100 A at a case temperature of 100°C and a maximum junction temperature of 175°C.
- The Repetitive Peak Collector Current (ICRM) is 200 A for a pulse duration (tP) of 1 ms.
- Total Power Dissipation (Ptot) is rated at 660 W with a case temperature of 25°C and a maximum junction temperature of 175°C.
- The Gate-Emitter Peak Voltage (VGES) is ±20V.
- The temperature range under switching conditions (Tvj op) is -40°C to 150°C.
- For mounting, a torque of 3.0~6.0 N·m should be applied to the M5 screw.
- The weight of the device is 300g.
