Infineon F4-100R12KS4 | Optimized 4-Pack IGBT for 3-Level Inverter Topologies
The Infineon F4-100R12KS4 is a high-performance 1200V, 100A IGBT module engineered to simplify and enhance the efficiency of advanced power conversion systems. By integrating four IGBTs in a half-bridge configuration within a single EconoPACK™ 2 package, this module provides an elegant solution for designers moving beyond conventional 2-level designs to more sophisticated topologies.
- Brand: Infineon
- Model: F4-100R12KS4
- Core Function: 1200V / 100A Four-Pack (Half-Bridge) IGBT Module
- Key Technology: IGBT4 Trench Field-Stop for low losses and soft switching.
- Primary Applications: High-efficiency solar inverters, uninterruptible power supplies (UPS), and advanced industrial motor drives.
A Technical Deep Dive: Core Advantages Unpacked
IGBT4 Trench Field-Stop Technology
At the heart of the F4-100R12KS4 lies Infineon's proven IGBT4 Trench Field-Stop technology. This isn't just an incremental update; it's a fundamental design choice that directly impacts your system's performance.
- Technical Principle: This technology combines a trench gate structure for high channel density with a field-stop layer that shortens the "tail current" during turn-off. The result is a significantly lower collector-emitter saturation voltage (Vce(sat)) and optimized, softer switching characteristics.
- Application Value: Lower Vce(sat) directly translates to reduced conduction loss, meaning less heat generation and higher overall system efficiency. The softer switching behavior minimizes voltage overshoots and reduces electromagnetic interference (EMI), allowing for smaller, less expensive snubber circuits and EMI filters, ultimately simplifying your EMC design process.
Integrated Four-Pack Design for Advanced Topologies
The F4-100R12KS4’s four-pack configuration is specifically tailored for building a 3-Level Neutral Point Clamped inverter or similar multilevel topologies.
- Technical Principle: By housing two half-bridges in one compact module, the internal connections are optimized, leading to significantly lower stray inductance compared to using two discrete half-bridge modules.
- Application Value: For high-frequency power conversion, minimizing parasitic inductance is critical to prevent damaging voltage spikes. This integrated approach simplifies the busbar layout, reduces assembly time, and enhances the reliability and power density of the final system.
Multi-Dimensional Application Scenarios
The unique features of the Infineon F4-100R12KS4 solve specific pain points across several demanding applications:
- Solar Inverters: In solar applications, every percentage point of efficiency counts. Using this module to create a 3-level inverter results in a higher quality output waveform with lower total harmonic distortion (THD). This allows for smaller, lighter, and more cost-effective output filters, a critical advantage for residential and commercial solar systems.
- Uninterruptible Power Supplies (UPS): For data centers and critical facilities, UPS reliability and operational cost are paramount. The low power losses of the F4-100R12KS4 reduce the thermal load, leading to lower cooling energy consumption and improved long-term reliability of the entire UPS unit.
- Industrial Motor Drives: High-performance servo drives benefit from the smoother output voltage of a 3-level topology. This reduces torque ripple, minimizes audible motor noise, and decreases stress on motor insulation and bearings, thereby extending the motor's operational lifespan.
Key Technical Parameters
Parameter | Value |
---|---|
Collector-Emitter Voltage (V_CES) | 1200 V |
Nominal Collector Current (I_C nom) | 100 A |
Collector-Emitter Saturation Voltage (V_CE(sat), typ. at 100A, 25°C) | 1.85 V |
Topology | Four-Pack (Half-Bridge x 2) |
Package | EconoPACK™ 2 |
For a complete list of parameters, please Contact Us for the F4-100R12KS4 datasheet.
Comparative Analysis: F4-100R12KS4 vs. Dual Half-Bridge Modules
When designing a T-NPC topology, engineers often weigh using an integrated four-pack module like the F4-100R12KS4 against two separate half-bridge modules. While dual modules offer some layout flexibility, the F4-100R12KS4 provides superior electrical performance due to its inherently lower loop inductance. This leads to cleaner switching, reduced voltage stress on the components, and a more robust and compact final design. For new high-efficiency inverter projects, the integrated approach is the more forward-looking choice.
Ready to leverage the efficiency and integration benefits of the Infineon F4-100R12KS4 in your next project? For specialized applications and other power components, explore our full range of IGBT modules. To discuss your specific design requirements or to request a quote, please contact our technical sales team.