Fairchild Semiconductor FCP36N60N IGBT Module

Manufacturer Part Number: FCP36N60NBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: FLANGE MOUNT, R-PSFM-T3Manufacturer Package Code: 340ATECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 1.51Avalanche Energy Rating (Eas): 1800 mJConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 600 VDrain Current-Max (Abs) (ID): 36 ADrain Current-Max (ID): 36 ADrain-source On Resistance-Max: 0.09 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 312 WPulsed Drain Current-Max (IDM): 108 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 36 A, 90 mΩ, TO-220, 1000-TUBE