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Fairchild Semiconductor FDME510PZT IGBT Module

FDME510PZT

#Fairchild Semiconductor, #FDME510PZT, #IGBT_Module, #IGBT, FDME510PZT P-Channel PowerTrench® MOSFET -20V, -6A, 37mΩ, 5000-REEL; FDME510PZT

· Categories: IGBT Module
· Manufacturer: Fairchild Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1000015209
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FDME510PZT Specification

Sell FDME510PZT, #Fairchild Semiconductor #FDME510PZT Stock, FDME510PZT P-Channel PowerTrench® MOSFET -20V, -6A, 37mΩ, 5000-REEL; FDME510PZT, #IGBT_Module, #IGBT, #FDME510PZT
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Manufacturer Part Number: FDME510PZTBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, S-PDSO-N3Manufacturer Package Code: 517DVECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.93Additional Feature: ESD PROTECTIONCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 6 ADrain Current-Max (ID): 6 ADrain-source On Resistance-Max: 0.037 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 210 pFJESD-30 Code: S-PDSO-N3JESD-609 Code: e4Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 2.1 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)Terminal Form: NO LEADTerminal Position: DUALTime P-Channel PowerTrench® MOSFET -20V, -6A, 37mΩ, 5000-REEL

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