Infineon FF1000R17IE4D_B2 IGBT Module

Electrical Features

●High short-circuit capability

●High surge current capability

●High current density

●Low switching losses

●Tvj op = 150°C

●VCEsat with positive temperature coefficient

●Enlarged diode for regenerative operation

Mechanical Features

●40kV AC 1min insulation

●Package with CTI > 400

●High creepage and clearance distances

●High power and thermal cycling capability

●Integrated NTC temperature sensor

●RoHS compliant

●Pre-applied Thermal Interface Material

Absolute maximum ratings (Tc=25°C unless without specified)

●Collector-Emitter voltage Vces:1700V

●Gate-Emitter voltage VGES:±20V

●Collector current Ic Continuous Tc=25°C :1000A

●Collector current Icp 1ms Tc=25°C :2000A

●Collector power dissipation Pc:59000W

●Operating junction temperature Tj:+150°C

●Storage temperature Tstg :-40 to +125°C

●Mounting screw torque 1.8~6.0 N·m

●Weight 1200g