#Infineon, #FF100R12RT4, #IGBT_Module, #IGBT, FF100R12RT4 34 mm 1200V/100A dual switch IGBT module with fast TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode.;
FF100R12RT4 Datasheet
Typical Applications
• High Power Converters
• Motor Drives
• UPS Systems
Electrical Features
• Extended Operation Temperature Tvjop
• Low Switching Losses
• Low VCEsat
• Tvjop=150°C
• VCEsat with positive Temperature Coefficient
MaximumRatedValues
Collector-emittervoltage Tvj = 25°C VCES 1200 V
Ccollectorcurrent TC = 100°C, Tvj max = 175°C IC nom 100 A
Repetitive peakcollector current tP = 1 ms ICRM 200 A
Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 555 W
Gate emitter peak voltage VGES +/-20 V
Temperature under switching conditions Tvj op -40 150 °C