#Infineon, #FF1200R17IP5P, #IGBT_Module, #IGBT, FF1200R17IP5P Infineon IGBT4 module with Trench/Fieldstop and Emitter controlled 3 diode
Typical Applications
●High power converters
●Motor drives
●Traction drives
●Wind turbines
Electrical Features
●Extended operating temperature Tvj op
● High current density
●Low VCEsat
●Tvj op = 175°C
Mechanical Features
●Package with CTI > 400
●High creepage and clearance distances
●High power and thermal cycling capability
●High power density
●Pre-applied Thermal interface material
Maximum ratings and characteristics
. Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1700V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :1200A
Collector current Icp 1ms Tc=25°C :2400A
Collector power dissipation Pc:12000W
Isolation Voltage VIsol (AC 1 minute) :4000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3~6 N·m
Weight 825 g