Infineon FF150R12ME3G IGBT Module

FF150R12ME3G

Description Value Package 8IHV73-3

Configuration Dual Pin Count 8

Kollektor-Emitter Sperrspannung Collector Emitter Voltage 1200 V

Kollektor-Dauergleichstrom DC collector current Tc=80°C,Tvj=150°C Icnom 150A

Kollektor-Dauergleichstrom DC collector current  Tc=25°C,Tvj=150°C Ic 200A

Periodischer Kollektor Spitzenstrom repetitive peak collector current tp=1 ms IcRM 300A

Gesamt Verlustleistung total power dissipation Tc=25°C,Tvj=150°C Ptot 695w

Gate Emitter Spitzenspannung gate emitter peak Voltage ±20 V

Mounting Screw Operating Temperature -40 to 125 °C

Trans IGBT Module N-CH 1200V 300A695W 8-pin